Mo/4H-SiC Schottky diodes for room temperature X-ray and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e693" altimg="si353.svg"><mml:mi>γ</mml:mi></mml:math>-ray spectroscopy
نویسندگان
چکیده
Mo/4H-SiC Schottky diodes were investigated as detectors for their suitability in photon counting X-ray and γ-ray spectroscopy. The diodes, with a 35μm thick n− epitaxial layer, treated phosphorus pentoxide surface passivation, which had been previously shown to improve the homogeneity of metal–semiconductor interface suppress leakage current. One device was coupled low-noise charge sensitive preamplifier standard onwards readout electronics; resultant spectrometer used accumulated spectra. an energy resolution 1.67 keV ± 0.08 (97 e− rms 5 rms) at 5.9 1.6 0.1 (93 6 59.54 keV. Despite moderate achieved, results suggested that current diode detector not dominant source noise limiting optimum operating conditions room temperature; lossy dielectrics close proximity input (including stray dielectrics) relatively large average electron–hole pair creation 4H-SiC (an inherent property) main contributors achieved terms.
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research
سال: 2022
ISSN: ['1872-9576', '0168-9002']
DOI: https://doi.org/10.1016/j.nima.2022.166330